Samsung shifts memory capacity from NAND flash to DDR2 - comments from readers

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Samsung shifts memory capacity from NAND flash to DDR2

Josephine Lien, Taipei; Carrie Yu, DIGITIMES Asia

Thursday 23 February 2006

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Intel to reveal more details about Open NAND Flash Interface initiative at IDF Taiwan (Apr 4, 2006)
Intel, Samsung and TI lead semiconductor makers in 2005 (Mar 20, 2006)
Samsung begins volume production of first 80nm DDR2 memory (Mar 13, 2006)
Nanya to raise DDR2 contract prices 10% in March (Mar 3, 2006)
Industry observers: Samsung not converting NAND flash capacity to DDR2 (Mar 1, 2006)
Merrill Lynch bullish on DRAM profitability this year (Feb 28, 2006)
NAND oversupply to worsen DRAM market, iSuppli predicts (Feb 23, 2006)
DRAMeXchange: DRAM market slow, NAND flash prices continue falling (Feb 23, 2006)
Nanya reiterates stable DRAM outlook (Feb 17, 2006)
Rumors that NAND flash negotiations between Sony and Samsung unravel lead to spot price slump (Feb 17, 2006)
DRAMeXchange: DDR2 shortage to remain over 10% in 1Q (Feb 15, 2006)
Samsung scraps plan to produce DRAM using 70nm process at 12-inch fab, say sources (Jan 19, 2006)
DDR2 to drive sales for memory module makers in 1Q (Jan 17, 2006)
DRAM output grew over 50% in 2005, DDR2 shows exceptional growth (Jan 16, 2006)
PSC to buy Macronix 12-inch fab for NAND flash production, say sources (Jan 13, 2006)
Samsung said to have discontinued DDR2 bundling as market rebounds; hikes DDR2 prices above DDR levels in contract market (Jan 13, 2006)
Samsung plans to reduce DDR2 capacity another 50 million 256Mbit-equivalent units in 1Q06 (Dec 29, 2005)

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