Toshiba announced the launch of 32GB embedded NAND flash memory modules that the company claims are the largest density yet announced, with the modules also having full compliance with the e-MMC and eSD standards. Samples will be available in September 2008, and mass production will start in the fourth quarter.
The new 32GB embedded devices combine eight 32Gbit NAND chips fabricated with Toshiba's 43nm process technology and also integrate a dedicated controller. Full compliance with JEDEC/MMCA version 4.3 and SDA version 2.0, high speed memory standards for memory cards as defined by the MultiMediaCard Association (MMCA) and SD Card Association (SDA), respectively, supports standard interfacing and simplified embedding in products, reducing development burdens on product manufacturers.
Toshiba offers a line-up of single-package embedded NAND Flash memories which include a controller to manage basic control functions for NAND applications: LBA-NAND memory, which has a NAND interface; eSD large capacity chips with SD interface; and e-MMC with an HS-MMC interface. This comprehensive line-up, available in densities ranging from 1GB to 32GB, supports application in a very wide range of products.
| Toshiba: e-MMC and e-SD specifications roundup | ||
| Item | e-MMC | e-SD |
| Interface | JEDEC/MMCA Ver 4.3 standard HS-MMC interface | SDA Ver 2.0 standard SD interface |
| Power Supply Voltage | 2.7 to 3.6V(memory core)/ 1.7V to 1.95V (interface) | 2.7 to 3.6V |
| Bus width | x1 / x4 / x8 | x1 / x4 |
| Writing speed | Target 10 MB/s (Sequential mode) | SDA standard Class 4 |
| Reading speed | Target 20 MB/s (Sequential mode) | SDA standard Class 4 |
| Temperature | -25 degrees - +85 degees celsius | -25degrees - +85 degees celsius |
| Package | 153-ball FBGA (+16 support Ball） | 153-ball FBGA （+16 support Ball） |
Source: Company
Toshiba introduces new embedded NAND flash in high densities
Photo: Company