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Samsung Electronics has announced what it claims is the industry's first multi-chip package (MCP) with phase-change RAM (PRAM) for use in mobile phones.

The 512-megabit (512Mb) PRAM in the MCP is backward compatible with 40nm-class NOR flash memory in both its hardware and software functionality, providing handset designers the convenience of having multi-chip packaging fully compatible with past stand-alone PRAM chip technology, the vendor said.

PRAM, which stores data via the phase change characteristics of its base material, an alloy of germanium, antimony and titanium, provides three-times faster data storage performance per word than NOR chips, according to Samsung. The new PRAM-packaged memory combines the nonvolatile nature of flash memory with the high-speed capability of DRAM. Its simple cell structure makes designing MCP chips for handsets a faster and easier process, with the imminent use of 30nm-class and finer process node technology to overcome long-time design difficulties inherent in NOR flash technology.

As a replacement for NOR, PRAM can more easily accommodate the growing demand for high-speed, high-density nonvolatile memory in mobile phones and other mobile applications such as MP3 players, personal multimedia players and navigational devices, Samsung said.