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Samsung reallocates more 12-inch capacity to NAND flash due to DRAM dielectrics material problem

Hans Wu, Taipei; Jack Lu, DIGITIMES Asia Tuesday 10 February 2004 0

Samsung Electronics has reallocated about 5,000 12-inch wafers worth of capacity from DRAM to NAND flash production as its newly adopted alumina-aluminium oxide (Al2O3) dielectrics material for DRAM processing resulted in low yield rates, according...

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