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220 GaN MOCVD reactors to be installed in 2015, says IHS

Press release; Jessie Shen, DIGITIMES Asia Wednesday 1 April 2015 0

Due to the major aggressive expansion plans of some China-based LED companies, IHS forecasts that 220 gallium nitride (GaN) reactors will be installed in 2015. This new capacity expansion is slightly different from what happened several years ago, when...

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