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Hynix Semiconductor has announced the Intel validation of 2Gb (Gigabit) DDR3 DRAM using 40nm-class process technology. The newly validated products are 2Gb DDR3 SDRAM component, 4GB DDR3 SODIMM and 2GB DDR3 UDIMM at the operating speed of 1333MHz with 1.5V power supply.

The products can offer the maximum data transfer speed of 1867MHz with 16-bit I/O and 3.7GB/s bandwidth. The productivity of Hynix's 40nm class 2Gb DDR3 is increased by more than 60% over 50nm class process technology, according to the company.

Hynix has begun mass producing this new 2Gb DDR3 using 40nm class. The company also expects that the validation of RDIMM will be also completed within this year.