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Tuesday 16 November 2021
Taiwan eyeing disruptive innovations for next-generation ICs
Taiwan is set to implement a spate of next-generation semiconductor R&D programs in the next few years looking to break through physical limits of ICs and support diverse AI applications,...
Monday 15 November 2021
IntelliEPI sees GaN HEMT as new growth driver in 2022
Taiwan's epi-wafer supplier Intelligent Epitaxy Technology (IntelliEPI) has started taking orders for its high-performance GaN-based HEMT products, which are expected to serve as...
Tuesday 2 November 2021
Highlights of the day: GaN drives the future of EV components
Third-generation gallium nitride (GaN) and silicon carbide (SiC) semiconductors are competing for use in power devices...
Tuesday 2 November 2021
Use of GaN devices relies on matched collaborative devices
Efficiency in using GaN devices, to a large extent, depends on design in circuit boards and matched use of collaborative devices, according to supply chain makers.
Tuesday 2 November 2021
GaN and SiC compete in the EV market
Third-generation gallium nitride (GaN) and silicon carbide (SiC) semiconductors are competing for use in power devices in future cars. While SiC has taken the lead thanks to Tesla,...
Tuesday 12 October 2021
VPEC rises as top GaAs epiwafer supplier
Taiwan-based epiwafer maker Visual Photonics Epitaxy (VPEC) has emerged as the world's top supplier of GaAs epiwafers with its market share in the segment surpassing that of British...
Wednesday 6 October 2021
NYCU establishes 3rd-generation semiconductor R&D center
National Yang Ming Chiao Tung University (NYCU) has set up an Industry Academia Innovation School consisting of two institutes, with Institute of Prospective Semiconductors focusing...
Monday 27 September 2021
China stepping up development of homegrown 3rd-gen semiconductor supply chain
China with its 14th 5-year Plan (2021-2025) will be stepping up the development of the country's homegrown third-generation semiconductor industry supply chain, according to industry...
Friday 24 September 2021
IDMs step up deployments in GaN, SiC devices
IDMs including TI, Infineon, STMicroelectronics and Microchip have all stepped up their deployments in the market for power devices using GaN, SiC and other third-generation semiconductor...
Thursday 23 September 2021
Military applications rising as niche market for GaN-on-SiC RF components, says Transcom
GaAs device and foundry company Transom expects military-use radars and other defense systems to emerge as niche application outlet for GaN-on-SiC RF components and modules including...
Friday 17 September 2021
GaN Systems strikes deal with BMW
GaN Systems has announced the signing of a comprehensive capacity agreement with BMW Group for GaN Systems' high-performance, automotive-grade GaN power transistors, which increase...
Monday 13 September 2021
IDMs, Foxconn, BYD deepening deployments in GaN, SiC devices
International IDMs, Taiwan's EMS leader Foxconn and China's semiconductor and EV vendor BYD Group are all keenly deepening their deployments in third-generation semiconductors GaN...
Friday 10 September 2021
Foxconn to make SiC components at 6-inch fab for EV, solar apps
Foxconn (Hon Hai) Technology Group has disclosed that at its newly-acquired 6-inch wafer fab in Hsinchu, northern Taiwan, the company will be making SiC components and IR MEMS sensors...
Thursday 9 September 2021
Wire-bonding to be increasingly needed to process car-use IGBT, SiC modules, says K&S VP
As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide)...
Thursday 9 September 2021
Compound semiconductors to play crucial role in emerging applications
Compound semiconductors including third-generation ones GaN and SiC will play a crucial part in the emerging 6G, car-use or mobile LiDAR, and biometrics device applications, according...