SiC MOSFET development: Q&A interview with Hestia Power CEO Lee Chwan-ying

Nuying Huang, Taipei; Adam Hwang, DIGITIMES Asia Monday 18 November 2019 0

SiC MOSFETs sees fast development and growing demand due to needs for high-voltage and high-power operating environment, but it is quite impossible for them to completely replace Si IGBTs (insulated gate bipolar transistors), according to Lee Chwan-ying,...

The article requires paid subscription. Subscribe Now

Email address

Password

Save my User ID and Password

Save my User ID and Password

Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each time they visit the site. To activate this function, check the 'Save my User ID and Password' box in the log-in section. This will save the password on the computer you're using to access the site.

Note: If you choose to use the log-out feature, you will lose your saved information. This means you will be required to log-in the next time you visit our site.

NEW individual users please REGISTER first.

Enterprise user first-time LOGIN.

I forgot my ID and/or password?

MEMBERSHIP BENEFITS

Full access to articles dating back to 2000.
Real-time access to the news as it breaks.
Access to premium content.
Full access to Tomorrow's Headlines.
Asia Supply Chain 250 dataset access.