SK Hynix has announced the development of HBM3 DRAM memory. SK Hynix indicated the latest development, which follows the start of mass production of HBM2E in July 2020, is expected to help consolidate the company's leadership in the market.
SK Hynix said its HBM3 DRAM can process up to 819GB per second, representing a 78% increase in the data-processing speed compared with the HBM2E. It also corrects data (bit) errors with the help of the built-in on-die error-correction code, significantly improving the reliability of the product.
SK Hynix's HBM3 DRAM will be available in 24GB and 16GB of capacities. For the 24GB series, SK Hynix engineers ground the height of a DRAM chip to approximately 30 micrometers, equivalent to a third of an A4 paper's thickness, before vertically stacking 12 chips using the through silicon via technology.
HBM3 is expected to be mainly adopted by high-performance data centers as well as machine learning platforms that enhance the level of artificial intelligence (AI) and super computing performance used to conduct climate change analysis and drug development, according to SK Hynix.
"Since its launch of the world's first HBM DRAM, SK Hynix has succeeded in developing the industry's first HBM3 after leading the HBM2E market," said Seon-yong Cha, executive VP in charge of the DRAM development. "We will continue our efforts to solidify our leadership in the premium memory market and help boost the values of our customers by providing products that are in line with the ESG management standards."
