Hynix announces development of 54nm-made 1Gb DDR2 mobile DRAM

Press release; Jessie Shen, DIGITIMES Asia Monday 27 April 2009 0

Hynix Semiconductor has announced the development of 1Gb DDR2 mobile DRAM using 54nm process technology for high-performance mobile applications. Mass production of the device is slated to kick off in the second half of this year.

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