SEI first to mass produce 2-inch low-dislocation GaN single crystal substrate for violet lasers

Press release; Sarah Chang, DIGITIMES Asia Friday 18 April 2003 0

Sumitomo Electric Industries (SEI) today announced the world’s first mass-production of 2-inch gallium nitride (GaN) substrate, for use in manufacturing high-power, high-quality violet lasers for next-generation, high-capacity optical disc equi...

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