Powdec announces breakthrough GaN transistor design

Press release

Mar 28, 2011, 14:44 1

Japan-based Powdec has announced that together with Sheffield University, they have succeeded in developing breakthrough high-voltage GaN power transistors. This was realized by creating semiconductor hetero-junction structures based on novel principles,...

The article requires paid subscription. Subscribe Now

Email address

Password

Keep me signed in

Keep me signed in

Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each time they visit the site. To activate this function, check the 'Keep me signed in' box in the log-in section. This will save the password on the computer you're using to access the site.

Note: If you choose to use the log-out feature, you will lose your saved information. This means you will be required to log-in the next time you visit our site.