IDMs keen to develop advanced power devices with SiC, GaN

Julian Ho, Taipei; Willis Ke, DIGITIMES Asia Monday 1 October 2018 0

International IDMs including STMicrolectronics, Infineon and TI are aggressively developing power devices using third-generation compound semiconductor materials silicon carbide (SiC) and gallium nitride (GaN), seeking to secure a preemptive presence...

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