Ever since the Polish scientist Jan Czochralski discovered a way to crystallize metals in 1915, the technique that eventually becomes known as the Czochralski method to grow high-purity semiconductors has long underpinned the global electronics industry with its ability to scale up the single-crystal production of silicon and germanium. A decade later, Czochralski was invited back to his native land where he consolidated his research and passed on his legacy to the Warsaw University of Technology.
The Warsaw-based Centre of Excellence in Nanophotonics, Advanced Materials, and Novel Crystal Growth-based Technologies - simply known as Ensemble3 - builds on Czochralski's heritage in crystal growth and material science, and aims to establish the material foundation for the development of photonics. Jointly created by the Łukasiewicz Research Network, the University of Warsaw, and several international partners in 2020, Ensemble3 works on the development of novel crystal growth-based material technologies as well as advanced materials applicable in photonics, optoelectronics, telecommunication, aerospace, and other fields.
As semiconductors become inalienable to supply chain autonomy and national strength, the Polish technology industry also finds the opportunity to leverage its advantage, especially in the field of photonics which is rapidly gaining traction for its application in sensing, telecommunication, and AI computing. According to the Polish Technology Platform for Photonics (PPTF), there are approximately 250 companies in Poland's photonics and microelectronics industry.
Ensemble3 engages in basic research, applied research, and pilot production. The basic research segment covers activities such as identifying prospective materials for specific applications, developing new material technologies for both theoretical and application purposes, and discovering nanoscale optical properties in crystal-based materials.
In terms of pilot production, the oxide crystal group under Ensemble3 provides synthesis and characterization of new oxide materials for scintillation and laser applications, while developing technologies to reduce crystal production cost and facilitating technology transfers. On the other hand, the compound semiconductor group focuses on developing single-crystal III-V compound semiconductors for optoelectronics, telecommunications, and other applications. Notably, the group engages in small-scale production of high-purity gallium arsenide (GaAs), indium arsenide (InAs), gallium phosphide (GaP), indium phosphide (InP), gallium antimonide (GaSb), and indium antimonide (InSb).
Oxide crystals are used in the construction of lasers and other photonic devices, while
semiconductor crystals are used in the manufacture of electronic devices such as diodes and transistors. In fact, as Ensemble3 pointed out, it is the leading manufacturer of GaP. GaP crystals are not manufactured to any significant extent by other competitors at this point.
With Poland's photonics ecosystem also underpinning its rising defense industry, as exemplified by leading photonics suppliers like VIGO Photonics which provides a wide range of military-grade components and modules used in thermal observation, anti-missile systems, and smart munitions, it is no surprise that Ensemble3, being a crucial R&D foundation of Polish photonics ecosystem, also underpins Polish defense ecosystem.
In May 2024, Ensemble3 became one of the few suppliers selected for funding by the European Defense Fund for the project ECOSYSTEM (European Common Supply chain for sovereign T2SL and infrared modules.) Project ECOSYSTEM aims to consolidate a fully European supply chain for the next generation of high-performance Type-II superlattice (T2SL) infrared detectors for defense applications. Specifically, ECOSYSTEM will establish the EU supply chain and roadmap for GaSb crystal growth and epi-ready substrates as well as the EU epitaxy supply chain and roadmap for selected types of infrared detectors. According to Ensemble3, GaSb is used to produce sputtering targets and deposition sources and as a substrate material for various semiconductor and photo-optic materials. Thermally treated GaSb, in addition, can be used as a surface-field THz emitter with an efficiency comparable to GaAs.
