According to a press release, on November 18, Samsung Electronics held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, which will house ASML's high-NA EUV system.
NRD-K commenced construction in 2022 and is poised to become a pivotal research hub for Samsung's memory, system LSI, and foundry semiconductor R&D endeavors. The complex, spanning 109,000 square meters within the Giheung campus, will house advanced infrastructure enabling research and product-level verification under one roof. Samsung plans to invest approximately KRW20 trillion by 2030 in this facility. Additionally, an R&D-dedicated line is scheduled to commence operations in mid-2025.
The NRD-K project will be outfitted with advanced technologies like high-NA EUV lithography and material deposition equipment to speed up the development of next-generation memory semiconductors, including 3D DRAM and V-NAND with over 1,000 layers.
Additionally, it will feature wafer-bonding infrastructure with cutting-edge wafer-to-wafer bonding capabilities. Samsung has invested a record-breaking KRW8.87 trillion in research and development during the third quarter of this year, aiming to enhance its competitiveness in future technologies, including advanced packaging for high-bandwidth memory production.
Young Hyun Jun, vice chairman and head of the device solutions division at Samsung Electronics, stated that NRD-K would enhance their development speed, allowing the company to create a beneficial cycle to advance fundamental research on next-generation technology and mass production. He emphasized their intent to establish a new foundation for progress in Giheung, the birthplace of Samsung Electronics' 50-year semiconductor history, aiming to create a promising future for the next 100 years.
"At a time when the importance of win-win partnerships is greater than ever, Applied Materials is committed to accelerating innovation velocity through deep collaboration with Samsung Electronics, working together to drive a new wave of growth for the semiconductor industry," said Park Gwang-Sun, Head of Applied Materials Korea.
Samsung's Giheung campus, situated south of Seoul, holds historical significance as the birthplace of the world's first 64-megabit (Mb) DRAM in 1992, marking the inception of the company's semiconductor leadership. The establishment of the new R&D facility will foster advancements in process technology and manufacturing tools, solidifying the site's position at the forefront of innovation.