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Samsung announces 70nm NAND flash and 80nm DRAM

Press release; Jack Lu, DIGITIMES Asia Tuesday 30 September 2003 0

South Korea-based Samsung Electronics said it has developed 70-nanometer (nm) 4Gbit NAND flash memory and 80nm 512Mbit DRAM and also unveiled a single-chip memory solution called fusion memory, the company announced on September 29.

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