Home Tech Semiconductors

SanDisk and Toshiba to launch 56nm-made NAND flash soon

Press release, January 23; Esther Lam, DIGITIMES Asia Tuesday 23 January 2007 0

SanDisk today announced that it expects to soon launch 56nm multi-level cell (MLC) NAND flash memory chips with Toshiba at Toshiba's 12-inch fab (Fab 3) at Yokkaichi, Nagoya, Japan. By spring 2007, SanDisk intends to ship the highest available density...

The article requires paid subscription. Subscribe Now

Email address

Password

Save my User ID and Password

Save my User ID and Password

Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each time they visit the site. To activate this function, check the 'Save my User ID and Password' box in the log-in section. This will save the password on the computer you're using to access the site.

Note: If you choose to use the log-out feature, you will lose your saved information. This means you will be required to log-in the next time you visit our site.

NEW individual users please REGISTER first.

Enterprise user first-time LOGIN.

I forgot my ID and/or password?

MEMBERSHIP BENEFITS

Full access to articles dating back to 2000.
Real-time access to the news as it breaks.
Access to premium content.
Full access to Tomorrow's Headlines.
Asia Supply Chain 250 dataset access.