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Samsung mass producing 16Gb NAND flash on 51nm

Press release, April 29; Esther Lam, DIGITIMES Asia Monday 30 April 2007 0

Samsung Electronics announced mass production of 16Gb multi-level cell (MLC) NAND flash on a 51nm process, stressing that it has achieved this new migration milestone after announcing production of its 60nm 8Gb NAND flash in August of 2006.

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