Micron Technology has announced that it will introduce extreme ultraviolet (EUV) technology to Japan, utilizing this advanced patterning technology to produce its next generation of DRAM, the 1-gamma node.
Micron's Hiroshima fab will play a crucial role in the company's development of the 1-gamma node, said the US memory vendor. Micron plans to invest up to JPY500 billion (US$3.64 billion) in 1-gamma process technology over the next few years, with the support of the Japanese government.
The introduction of 1-gamma follows the development of Micron's 1-beta (1β), the industry's most advanced DRAM node today, which Micron mass produces in its Hiroshima fab. Micron continues to make progress on its EUV integration plans and expects to ramp EUV into production on the 1-gamma node in Taiwan and Japan from 2025 onwards, according to the company.
"Micron's Hiroshima operations have been central to the development and production of several industry-leading technologies for memory over the past decade," Micron president and CEO Sanjay Mehrotra said. "We are proud to be the first to use EUV in Japan and to be developing and manufacturing 1-gamma at our Hiroshima fab. Our plans reflect our continued commitment to Japan, strong relationship with the Japanese government and the exceptional talent of our Micron Hiroshima team."
