Samsung Electronics is likely to put off the construction of a new logic fabrication facility dubbed Line-17, due to the possibility of losing a portion of orders for Apple's next-generation...

Samsung Electronics and SK Hynix have both stepped up efforts to migrate to 20nm process technology, which is expected to become their mainstream production node for DRAM memory in...

Globalfoundries' combined capacity for 28/32nm chips has climbed to 60,000-80,000 wafers a month, according to Michael Noonen, the foundry's executive VP for marketing and sales.

SK Hynix has developed 20nm-class 4Gb graphics DDR3 DRAM, designed specifically for notebooks requiring low-power consumption.

TSMC's sales representatives and its design service team, as well as a group of technical support staff from its IC design subsidiary Global Unichip, have been stationed in the US...

Samsung Electronics recently announced that the company has begun sampling the industry's first 16GB DDR4 RDIMMs, designed for use in enterprise server systems.

United Microelectronics (UMC) announced recently that the company has signed a license agreement with IBM to expedite the development of its 20nm CMOS process with FinFET 3D transi...

The semiconductor industry will accelerate towards the adoption of 28nm process in 2012, and begin its transition to the next technology node in 2013, according to Chi-Ping Hsu, a...

The successful roll-out of Xilinx devices on 28nm at TSMC has encouraged the FPGA design firm to utilize TSMC's 20nm technology for its next-generation products, with the tape-out...

Taiwan Semiconductor Manufacturing Company (TSMC) will announce its revised capex budget for 2012 at its upcoming investors meeting on April 26, according to company chairman and...

TSMC on April 9 held a groundbreaking ceremony at the South Taiwan Science Park in Tainan for Phase 5 of its Fab 14 Gigafab. Following TSMC's Fab 12 Phase 6 in Hsinchu, this facility...

Taiwan Semiconductor Manufacturing Company (TSMC) on December 9 held a groundbreaking ceremony for the Phase 3 facility at Fab 15 in Taichung, central Taiwan, and also revealed that...

Samsung Electronics has issued a statement disclosing plans to set up a flash memory chip plant in China.

Intel and Micron Technology have jointly announced a 20nm, 128Gb multilevel-cell (MLC) NAND falsh device. The companies also announced mass production of their 20nm 64Gb NAND.

ARM has announced the opening of a new R&D center at the Hsinchu Science Park, northern Taiwan. The focus of the center will be physical IP development and processor implementation...