In the ongoing patent dispute over wide bandgap GaN technology, the US-based EPC announced on November 8 that the International Trade Commission (ITC) confirmed its preliminary ruling,...
In the past six months, China's leading GaN compound semiconductor firm Innoscience has faced patent infringement lawsuits in Germany and the US, from power component manufacturers...
The international patent war over compound semiconductors, specifically Gallium Nitride (GaN), continues to intensify. In July, Efficient Power Conversion (EPC) from the US won a...
The patent war surrounding gallium nitride (GaN) compound semiconductors continues to escalate. Recently, power component leader Infineon intensified its patent infringement case...
On July 23, 2024, Infineon Technologies AG expanded its ongoing lawsuit in the U.S. District Court for the Northern District of California, adding claims against Innoscience (Zhuhai)...
Chinese Gallium Nitride (GaN) IDM Innoscience is preparing to go public on the Hong Kong Stock Exchange (HKEX), despite continued losses and the possibility of future losses due to...
Gallium nitride (GaN) has not been able to gain much traction compared to silicon carbide (SiC), another power semiconductor material. In May, US-based Efficient Power Conversion...
China has always hoped that, through compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN), it can leapfrog Europe, the US, Japan, and Korea and break their...
The GaN (gallium nitride) patent disputes between the US and China have existed for a long time, but not until recently did the American vendor Efficient Power Conversion Corp. (EPC)...
A recent patent lawsuit filed by US-based gallium nitride (GaN) technology specialist Efficient Power Conversion Corp (EPC) against China's top GaN devices vendor Innoscience Technology...
