GaAs- and InP-based LD (laser diode) and PD (photo diode) epitaxial wafer maker LandMark Optoelectronics has reported net EPS of NT$7.22 (US$0.23) for first-half 2015.

GaAs- and InP-based LD (laser diode) and PD (photo diode) epitaxial wafer maker LandMark Optoelectronics will shift its listing from Taiwan's Emerging Stock Market to the over-the-counter...