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Wednesday 6 September 2023
SK Hynix reclaims no. 2 DRAM vendor spot with global market share exceeding 30% in 2Q23
As generative AI keeps driving demand for high bandwidth memory (HBM), the global DRAM market landscape is also undergoing changes, with SK Hynix's global DRAM market share exceeding...
Friday 26 March 2021
Samsung develops HKMG-based DDR5 memory
Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology, according to the company.
Tuesday 18 August 2020
Samsung announces silicon-proven 3D IC technology
Samsung Electronics has announced the immediate availability of its silicon-proven 3D IC packaging technology, eXtended-Cube (X-Cube), for today's most advanced process nodes.
Monday 12 August 2019
SK Hynix develops HBM2E DRAM
SK Hynix has developed HBM2E DRAM product with what it calls the industry's highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity...
Friday 14 July 2017
Toshiba develops 3D flash memory with TSV technology
Toshiba has announced development of its BiCS flash three-dimensional (3D) flash memory utilizing through-silicon via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC)...
Thursday 11 September 2008
SEMICON Taiwan 2008: Equipment makers pay more attention to new materials and through-silicon via
Semiconductor equipment makers are not being discouraged by the present industry downturn. Material supplier Rohm & Haas Electronic Materials and equipment vendor KLA-Tencor have...
Research Report Database
Samsung expands mobile phone production beyond Asian countries, says DIGITIMES Research
SLMs to increase presence in GenAI business opportunities, says DIGITIMES Research
Generative AI market to reach US$1.5 trillion by 2030 with Taiwan holds hardware advantage; software and services to see promising future, says DIGITIMES Research