Samsung targets 2nm process for HBM4E base die to boost AI chip edge

Lillian Chen, Taipei Mar 13, 2026, 08:04 0

Credit: AFP

Samsung Electronics is reportedly planning to adopt a 2-nanometer (nm) process for the base die of its next-generation high-bandwidth memory (HBM), HBM4E, aiming to enhance its technological competitiveness. Industry experts see this as part of Samsung's...

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