Rohm Semiconductor will be mass-producing SiC power semiconductors starting in December 2022, mainly for inverter application. It makes power consumption more efficient and can add...
Rohm Semiconductor has struck a strategic cooperation agreement with China's Shenzhen-based BASiC Semiconductor under which the pair will jointly develop SiC power devices for electric...
Japan-based Rohm Semiconductor has newly launched a prototype SoC featuring an on-device learning AI accelerator, which can instantly predict the failure of electronic devices such...
According to the latest data from Semiconductor Association of Japan (SEAJ), sales of Japanese semiconductor equipment increased by almost 40% in August, reaching JPY347.3 billion...
Rohm Semiconductor has announced that it is partnering with SemiDrive Technology, a China-based SoC manufacturer of next-generation cockpits, to develop automotive solutions. The...
Automotive IC IDMs including Rohm Semiconductor will reportedly raise their prices to reflect rising raw material costs, according to industry sources.
Chinese automakers are stepping up efforts developing SiC components that support high-efficiency, small-form-factor and lightweight needs for electric vehicles' (EV) power systems,...
Japan's Sumitomo Metal Mining (SMM) has decided to construct a new 8-inch direct bonded SiC wafer substrate mass-production prototype line, which will be completed for March 2024...
IDMs have been promoting their integrated GaN chip solutions, and may step up outsourcing the production of such devices to satisfy growing demand, according to industry sources.
Rohm Semiconductor and Delta Electronics have entered into a strategic partnership to develop and mass produce next-generation gallium nitride (GaN) power devices, according to the...
From 2010 to 2020, Tesla set the standard for success in the electric vehicle market, but now US-based luxury battery electric vehicle (BEV) maker Lucid Motors and electric pickup...
Both third-generation semiconductor silicon carbide (SiC) power components and silicon-based insulated gate bipolar transistors (Si-based IGBT) are being used in electric vehicles...
The wide bandgap (WBG) features of third-generation semiconductors make them particularly suitable for recharging and radio frequency (RF) applications, as silicon carbide (SiC) has...
