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Cree demonstrates 400W of RF power for GaN S-band transistor

Press release, June 14; Eric Mah, DIGITIMES Asia Wednesday 14 June 2006 0

Cree on June 13 announced that it has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications. The discrete transistor produces a record 400 watts of peak pulsed RF power at 3.3 GHz with 10.6 dB of...

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