China-based power semiconductor provider Byinka has announced the shipment of its 7th-generation Insulated Gate Bipolar Transistor (IGBT) to leading companies across industries such as electric vehicles (EV), photovoltaics (PV), and energy storage. This development marks a significant step in closing China's technology gap with Japanese and European companies in IGBT technologies.
In an interview with Jiwei, Byinka CEO He Lin revealed that their 7th-generation IGBT has been trialed and introduced in small batches, with excellent feedback. Some performance metrics reportedly outperform international top brands, and the company's products have now entered the large-scale delivery stage.
The 7th-generation IGBT developed by Byinka boasts higher power density, a simpler drive circuit, and a wider safe operating area (SOA). It can be manufactured using a 50nm node process, representing a significant technological advancement.
Byinka is taking a calculated approach to entering the automotive IGBT market. While recognizing the importance of achieving automotive-grade qualification for their 7th-generation IGBT technology, they are strategically focusing on solidifying their presence in the industrial control and photovoltaics sectors first. This approach allows them to refine their technology and build a strong reputation before tackling the demanding automotive market.
Market dynamics and future outlook
Lin noted that while oversupply is driving fierce competition in the mid-to-low-end IGBT segment, demand for high-performance devices is surging. According to Jiwei, the growth rate of the IGBT market in the energy storage sector is expected to outpace the automotive industry in the coming years, reaching a market share of 9.7% by 2025. Notably, China stands as the world's dominant IGBT market, consuming over 40% of global demand, with this share expected to rise further.
Founded in 2022, Byinka successfully developed its in-house 7th-generation IGBT using 300mm wafers in July 2023. The company has since launched a full range of 7th-generation IGBT products, spanning from 1000V to 1700V.
According to DIGITIMES Research, while global leaders Infineon and Fuji Electric developed their 7th-generation IGBT in 2018, most China-based companies' IGBT technology remains at the 5th or 6th generation level, lagging by at least five years. However, the vast domestic market is expected to strongly support the revenue growth of Chinese companies.
Other China-based semiconductor companies have also made strides in developing 7th-generation IGBTs in recent years. StarPower Semiconductor unveiled its product in 2022, and MACMIC launched its 7th-generation IGBT in 2023, both utilizing 300mm wafers.
