SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor industry undergoes rapid transformation.
Speaking at the prestigious IEEE Symposium on VLSI Technology and Circuits held in Kyoto, Japan, Cha Seon-yong, Chief Technology Officer of SK Hynix, delivered a keynote entitled "Leading DRAM Innovation for a Sustainable Future." The symposium, recognized as one of the most authoritative gatherings in the field of advanced semiconductor circuits and process technologies, alternates annually between the United States and Japan, drawing leading minds from across the globe.
Pushing past the nanometer barrier
Cha underscored the imminent challenges facing the industry as current scaling methods for DRAM technologies encounter increasing resistance in terms of performance and density gains. In response, SK Hynix plans to pioneer a new era of memory innovation based on sub-10nm technologies, focusing on structural, material, and device-level breakthroughs.
SK Hynix Chief Technology Officer Cha Seon-yong. Credit: SK Hynix
Next-gen platform to feature Vertical Gate and 3D DRAM
Among the key pillars of this roadmap is the 4F Square Vertical Gate (VG) platform—a next-generation architecture that significantly enhances memory density. The company plans to shrink the DRAM cell footprint from the conventional 6F (2F x 3F) to 4F (2F x 2F) while replacing planar transistor gates with vertically stacked structures that wrap around the channel. The design is expected to unlock greater integration and performance gains as scaling challenges mount.
Cost challenges loom over 3D DRAM transition
In tandem, SK Hynix is investing in 3D DRAM, a transformative technology that vertically stacks memory cells to overcome planar scaling limitations. While industry observers have noted concerns about rising production costs with increased stacking layers, the company says it is committed to leveraging technological innovation to mitigate those challenges.
The company also emphasized its efforts to strengthen its core materials science and DRAM component engineering, laying the groundwork for sustained innovation and long-term growth. These advances are positioned not only to push technological boundaries but also to inspire the next generation of engineers and researchers to envision new frontiers in memory development.
Building for the long haul: Materials, devices, and talent
Cha recalled that around 2010, the semiconductor community widely believed DRAM scaling would halt at the 20nm threshold. Yet, through relentless innovation, SK Hynix has continued to defy expectations. The company now hopes to share this spirit of perseverance with young talent entering the field and work collaboratively with industry partners to transform the vision of future DRAM into a reality.
As part of the conference, SK Hynix also showcased its latest research integrating VG and wafer bonding technologies, presenting promising electrical characteristics that could shape the future performance and manufacturability of DRAM.
Article edited by Jack Wu
