CONNECT WITH US
NEWS TAGGED GAN
Wednesday 1 April 2015
220 GaN MOCVD reactors to be installed in 2015, says IHS
Due to the major aggressive expansion plans of some China-based LED companies, IHS forecasts that 220 gallium nitride (GaN) reactors will be installed in 2015. This new capacity expansion...
Wednesday 22 October 2014
GaN LEDs in automotives to reach US$1 billion in 2014, says IHS
The market for GaN packaged LEDs in automotive applications is forecast to reach the US$1 billion mark in 2014 for the first time, according to IHS.
Thursday 3 July 2014
Epistar to reach 15% GaN wafer capacity market share following FOREPI merger, says IHS
Following the announcement on June 30 that Epistar is acquiring Formosa Epitaxy (FOREPI), Epistar will have over 400 MOCVD reactors including those from FOREPI's China subsidiaries,...
Friday 14 February 2014
GaN LED revenues increase 10.6% in 2013 but fast growth is coming to an end, says IHS
Driven by surging demand from the lighting, tablet and mobile backlighting segments, global revenues for GaN LED climbed 10.6% in 2013, but this could mark the last hurrah for the...
Friday 6 December 2013
GaN-on-silicon LEDs forecast to increase market share to 40% by 2020, says IHS
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for...
Friday 18 October 2013
Sanan could lead in GaN LED wafer capacity by end of 2014, says IHS
China-based die vendor Sanan is projected to take the lead in GaN LED wafer capacity by the end of 2014, overtaking current leader Epistar of Taiwan, according to IHS.
Tuesday 25 June 2013
GaN LED shipments to exceed 100 billion units in 2013, says IHS
More than 100 billion gallium nitride light-emitting diodes (GaN LED) will ship in 2013 - the equivalent of 15 for every person on the planet using this particular type of lighting...
Thursday 25 April 2013
GaN and SiC Power IC market set to rise by factor of 18 from 2012 to 2022, says IHS
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from...
Monday 21 January 2013
Si-based GaN difficult to replace sapphire, says TSMC SSL president
Toshiba and US-based Bridgelux will reportedly start volume production of 8-inch Si-substrate GaN wafers for use to make LED chips in the first quarter of 2013, according to Taiwan-based...
Monday 10 December 2012
GaN-on-silicon for power conversion, who are the likely winners in the commercialization race, asks Petrov Group
The high importance of GaN-on-Si technology for power conversion applications is by now evident, says Boris Petrov, managing director of the Petrov Group. It is driven by cost and...
Friday 9 November 2012
GaN-on-Si for LED: Q&A with Azzurro vice president of sales and marketing Erwin Ysewijn
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors,...
Thursday 21 June 2012
Veeco introduces new suite of GaN MOCVD systems to extend industry leadership in LED manufacturing
Veeco Instruments Inc. recently introduced three new models of its market-leading TurboDisc metal organic chemical vapor deposition (MOCVD) systems for the production of high brightness...
Friday 24 February 2012
AZZURRO advisory board extended with two industry experts
AZZURRO Semiconductors, a pioneer and leader in GaN-on-Si technology has won two new members to its advisory board: the former CTO of Agilent Dr. Roland Haitz as well as former Siemens...
Monday 6 February 2012
AZZURRO CEO visited Taiwan and discussed GaN on Silicon technologies
AZZURRO Chief Executive Officer (CEO) Erwin WOLF visited Taiwan and announced a variety of new advances in the GaN on Si. programs run by the company. On his trip AZZURRO's VP of...
Wednesday 16 November 2011
Explosive growth in next-generation power semiconductors expected, says Information Network
Traditional silicon-based power semiconductors are reaching their theoretical limitations. Fortunately because of their superior material properties, wide-bandgap power semiconductor...
filusch fiore kommunikations.design GmbH
Samsung expands mobile phone production beyond Asian countries, says DIGITIMES Research
SLMs to increase presence in GenAI business opportunities, says DIGITIMES Research
Generative AI market to reach US$1.5 trillion by 2030 with Taiwan holds hardware advantage; software and services to see promising future, says DIGITIMES Research