Following the announcement on June 30 that Epistar is acquiring Formosa Epitaxy (FOREPI), Epistar will have over 400 MOCVD reactors including those from FOREPI's China subsidiaries,...
Driven by surging demand from the lighting, tablet and mobile backlighting segments, global revenues for GaN LED climbed 10.6% in 2013, but this could mark the last hurrah for the...
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for...
China-based die vendor Sanan is projected to take the lead in GaN LED wafer capacity by the end of 2014, overtaking current leader Epistar of Taiwan, according to IHS.
More than 100 billion gallium nitride light-emitting diodes (GaN LED) will ship in 2013 - the equivalent of 15 for every person on the planet using this particular type of lighting...
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from...
Toshiba and US-based Bridgelux will reportedly start volume production of 8-inch Si-substrate GaN wafers for use to make LED chips in the first quarter of 2013, according to Taiwan-based...
The high importance of GaN-on-Si technology for power conversion applications is by now evident, says Boris Petrov, managing director of the Petrov Group. It is driven by cost and...
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors,...
Veeco Instruments Inc. recently introduced three new models of its market-leading TurboDisc metal organic chemical vapor deposition (MOCVD) systems for the production of high brightness...
AZZURRO Semiconductors, a pioneer and leader in GaN-on-Si technology has won two new members to its advisory board: the former CTO of Agilent Dr. Roland Haitz as well as former Siemens...
AZZURRO Chief Executive Officer (CEO) Erwin WOLF visited Taiwan and announced a variety of new advances in the GaN on Si. programs run by the company. On his trip AZZURRO's VP of...
Traditional silicon-based power semiconductors are reaching their theoretical limitations. Fortunately because of their superior material properties, wide-bandgap power semiconductor...
Japan-based Powdec has announced that together with Sheffield University, they have succeeded in developing breakthrough high-voltage GaN power transistors. This was realized by creating...
