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NEWS TAGGED HBM3E
Thursday 28 March 2024
Samsung raises HBM shipping volume target, implying successful validation at Nvidia
Samsung Electronics announced an increase in its 2024 HBM shipping volume and disclosed more details about the development of its HBM4 product, showing that its specifications are...
Tuesday 26 March 2024
With HBM pie too tempting, could Micron sacrifice production capacity for other memory chips?
Micron Technology has seen its orders for High Bandwidth Memory (HBM) wait to be fulfilled throughout 2025.
Tuesday 26 March 2024
Samsung likely to solely supply 12-layer HBM3E to Nvidia as early as September
Reports suggest that Samsung Electronics may soon become the sole supplier of 12-layer HBM products for Nvidia.
Monday 25 March 2024
Exclusive: Taiwan supply chain helps Micron to achieve early HBM3E mass production
Support from Taiwan's supply chain was behind US memory IDM Micron's successful mass production of its latest-generation high bandwidth memory (HBM) product – HBM3E –...
Friday 22 March 2024
Samsung and SK Hynix see memory businesses turn the corner in 2024
The South Korean memory industry is finally starting to recover.
Thursday 21 March 2024
Nvidia's Jensen Huang takes diplomatic rain check on Samsung's wafers
Huang showcased his diplomatic flair at Nvida's AI developers' conference.
Tuesday 19 March 2024
Global top-3 memory maker status, 4Q 2023

Introduction

Tuesday 19 March 2024
SK Hynix begins volume production of industry's first HBM3E
SK Hynix Inc. announced today that it has begun volume production of HBM3E, the newest AI memory product with ultra-high performance, for supply to a customer in late March. The company...
Thursday 14 March 2024
Samsung is reportedly 'upgrading' its HBM development team
Samsung Electronics is reportedly pushing to establish an HBM development unit to increase Samsung's competitiveness in High-Bandwidth Memory (HBM). In other words, the recently formed...
Wednesday 13 March 2024
Samsung denies rumors about applying MR-MUF to improve HBM yield
Refuting a Reuters report citing five people stating that Samsung Electronics will apply Mass Reflow Molded Underfill (MR-MUF) technology, which is the process used by SK...
Monday 11 March 2024
SK Hynix reported has submitted 12-layer HBM3E samples to Nvidia
Players in the memory industry are fiercely competing with each other in developing the fifth-generation High Bandwidth Memory (HBM) HBM3E due to the intense demand from AI GPUs....
Monday 11 March 2024
South Korea seeks to stop tech leak, as HBM3E race intensifies
Against the backdrop of the emergence of protectionism, competition surrounding High Bandwidth Memory (HBM) is also heating up. Although the South Korean court has ruled to hinder...
Monday 4 March 2024
Samsung accelerates R&D in MUF process and 2nd Gen MBCFET
Samsung Electronics is reportedly promoting Molded Underfill (MUF) materials in its advanced packaging processes. Since SK Hynix has already adopted MUF technology for its High Bandwidth...
Monday 4 March 2024
HBM technology and capacity deployment

Introduction

Thursday 29 February 2024
SK Hynix said to purchase 8 EUV machines for HBM3E processes
SK Hynix plans to invest KRW2 trillion ($1.5 billion) in 2024 to introduce extreme ultraviolet (EUV) lithography equipment to cope with the new generation of memory investment in...
megawin
Samsung expands mobile phone production beyond Asian countries, says DIGITIMES Research
SLMs to increase presence in GenAI business opportunities, says DIGITIMES Research
Generative AI market to reach US$1.5 trillion by 2030 with Taiwan holds hardware advantage; software and services to see promising future, says DIGITIMES Research