ChangXin Memory Technologies (CXMT) has accelerated its next-generation DRAM development, transitioning from 17nm to 16nm process technology for its first DDR5 product, according to TechInsights. The company is also advancing 15nm DRAM, with plans to complete R&D by 2025 and begin mass production in late 2026.
The Financial Times, as cited by DIGITIMES, reports that CXMT's "snowballing" growth is challenging South Korea's stronghold in the semiconductor industry.
Analysis reveals CXMT G4 DDR5 specifications
A detailed analysis by TechInsights of the Gloway DDR5-6000 UDIMM (32GB Kit) found 16 CXMT 16Gb DDR5 chips, each with a 66.99mm² die size, 0.239Gb/mm² bit density, and an estimated 16nm circuit linewidth.
CXMT's G4 DDR5 reduces DRAM cell size by 20% compared to G3 (18nm). For context, Samsung and SK Hynix introduced 16nm DRAM (1y node) in 2016.
Process advancement narrows technology gap
CXMT has expedited DRAM production, launching LPDDR5 in late 2024 and planning to commercialize DDR5 by early 2025, according to EE Times China.
Industry sources indicate CXMT's G4 process is progressing faster than expected. TechInsights notes that CXMT finalized 16nm DRAM development immediately after completing 17nm, making 16nm the default for its first DDR5 product.
CXMT's G5 process faces challenges due to US sanctions restricting EUV lithography, reports ICsmart. However, the company plans to develop and mass-produce 15nm DRAM using existing equipment, similar to Micron's 13nm DRAM, which also operates without EUV.
Samsung and SK Hynix pioneered 15nm DRAM (1z) in 2019 and are now mass-producing 12nm (1b) DRAM. While China still trails South Korea in DRAM technology, the technological gap continues to narrow.
Research demonstrates China's advancing memory technology
China's rapid progress in semiconductor memory, as reported by Daum, is steadily reducing the technology gap with South Korea.
South Korea's previous dominance in memory now faces competition as China's NAND flash production nears parity. Meanwhile, China is rapidly advancing in HBM technology, a key component in AI development.
A study led by Dr. Seoin Baek at Hanyang University's Department of Chinese Studies found that in 2023, Chinese institutions published 169 HBM research papers, 2.5 times more than South Korea's 67. The US followed with 114, while Germany (30), India (29), and Taiwan (23) lagged behind. According to Zum.com and Nate, South Korea previously dominated HBM research in the early 2000s.
Despite holding 90% of the global HBM market, South Korea now trails China in foundational research. Dr. Baek notes that China's semiconductor R&D output has surpassed South Korea's, with firms like CXMT, XMC, and Tongfu Microelectronics ramping up HBM2 production. China aims for 70% self-sufficiency by 2025, with Tongfu already supplying Huawei. Dr. Baek predicts that China's memory tech gap—once a decade apart—could shrink to just a few years.
CXMT's DRAM market share rose to 5% in 2023, signaling growing competition for Samsung, SK Hynix, and Micron, according to Yole Intelligence. TrendForce predicts China's share will reach 10.1% by the third quarter of 2025. CXMT has evolved from DDR to DDR5, improving data transfer speeds, while China's DRAM tech gap with South Korea has narrowed to three years since Korea's DDR5 mass production began in 2021.
G5 process development continues amid restrictions
CXMT's G5 process is on track for completion by late 2025, with sample production expected in the second half of 2026, according to TechInsights. However, yield rates may be a challenge, as advanced DRAM nodes still require EUV lithography and other restricted technologies like high aspect ratio (HAR) etching and low-temperature etching, which remain subject to US export controls.
To counter US export restrictions, China is intensifying domestic semiconductor equipment production, aiming to reduce reliance on foreign suppliers and enhance long-term competitiveness.
